Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Abstract:

We have carefully investigated a number of more than 120 selected chips fabricated on one wafer, by I-V measurements at two different precisely controlled temperatures and precision CV measurements at room temperature. From these measurements the net-doping concentration, the C-V (flat-band) barrier ΦCV, the ideality n, the apparent Richardson constant Aapp and the apparent I-V barrier Φapp have been extracted for each chip. An extremely unique C-V barrier was determined showing a relative standard deviation (sigma over mean) of only 0.086%. Moreover, the average ideality n was found to be as low as 1.028 exhibiting a relative standard deviation of only 0.35%. A clear linear correlation (ρ2 = 0.968) between ideality n and apparent I-V barrier was observed. The effective Richardson constant A** of 4H-SiC in 〈0001〉 directions could therefore be extracted to be most likely in the interval 70 Acm-2K-2 < A** < 80 Acm-2K-2.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 1147-1150
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.1147
• Online since: October 2006
• Authors: Dietrich Stephani, Reinhold Schörner, Dethard Peters, Peter Friedrichs
• Keywords: 1200 V Schottky Barrier Diodes, 4H-SiC Richardson Constant, C-V Barrier, I-V Barrier, Thermionic-Emission

References

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[8] 99 12 5 4.

[60] 80 120 Effective Richardson constant A* ( Acm-2K-2) Frequency.

[1] 100 40200.

100.

[20] [40] [60] [80] [8] 99 12 5 4.

[60] 80 120 Effective Richardson constant A* ( Acm-2K-2) Frequency.

[1] 100 40200.

100.

[20] [40] [60] 80.