A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

Michael Treu; Roland Rupp; Chee Siew Tai; Peter Blaschitz; Jochen Hilsenbeck; Helmut Brunner; Dethard Peters; Rudolf Elpelt; T. Reimann

doi:10.4028/www.scientific.net/MSF.527-529.1155

Paper Titles

SiC Device Applications: Identifying and Developing Commercial Applications
p.1135

Developments in Hybrid Si – SiC Power Modules
p.1141

Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes
p.1147

Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling
p.1151

A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications
p.1155

Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
p.1159

4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
p.1163

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
p.1167

Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO₂/High-K Dielectric Stack
p.1171

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A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

Abstract:

Today silicon carbide (SiC) Schottky diodes are mainly used in the power factor control (PFC) unit of high end switched mode power supplies, due to their outstanding switching performance compared to Si pn diodes. In the case of the PFC it is required that the diodes are capable of handling surge currents up to several times the current of normal operation. The paper shows the surge current capability of a merged pn Schottky diode where the p-areas are optimized as efficient emitters. During normal operation the diode is behaving like a normal Schottky diode whereas during surge current condition the diode is behaving like a pn diode. For a sine half wave of 10 ms we achieved a non repetitive peak forward current capability of about 3700 A/cm2 which is about ten times rated current (for comparison: destructive current density of a standard Schottky diode ~ 1650 A/cm²). Additionally the device shows a stable avalanche and is able to withstand a single shot avalanche of 9.5 3s and 12.5 mJ.