Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling

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The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based simulations. It is shown that the unexpected occurrence of voltage surges systematically detected in state-of-the-art devices is a thermally-induced effect due to the compound contribution of a) the negative temperature coefficient of the forward current at high voltages and b) the relatively high package-to-ambient thermal resistance. As a main result, it is demonstrated that the proposed approaches are suitable to accurately predict the value of a “critical” current density beyond which voltage surges may arise.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1151-1154

Citation:

A. Irace et al., "Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling", Materials Science Forum, Vols. 527-529, pp. 1151-1154, 2006

Online since:

October 2006

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$38.00

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