Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

Kazuhiko Kusunoki; Kazuhito Kamei; Nobuhiro Okada; Nobuyoshi Yashiro; Akihiro Yauchi; Toru Ujihara; Kazuo Nakajima

doi:10.4028/www.scientific.net/MSF.527-529.119

Paper Titles

Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
p.103

SiC HTCVD Simulation Modified by Sublimation Etching
p.107

Gas Fed Top-Seeded Solution Growth of Silicon Carbide
p.111

Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
p.115

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
p.119

Growth of Cubic Silicon Carbide Crystals from Solution
p.123

Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling
p.129

Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
p.135

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices
p.141

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Solution Growth of SiC Crystal with High Growth...

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

Abstract:

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.