Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Stanislav I. Soloviev; Peter M. Sandvik; Steve Arthur; Kevin Matocha; S.I. Maximenko; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.527-529.427

Paper Titles

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415

Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
p.423

Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
p.427

Structural Defects and Critical Electric Field in 3C-SiC
p.431

Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
p.435

Open Core Dislocations and Surface Energy of SiC
p.439

Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
p.443

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Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Abstract:

In this work, we investigated the effect of crystal defects on reverse I-V characteristics of avalanche photodiodes (APDs) using electron-beam induced current (EBIC) mode of SEM. Two types of SiC APD structures (I and II) were fabricated using 2 inch p-doped substrates with n-doped epilayers and 3 inch n-doped substrates with p- and n- epilayers. Areas of the formed diodes were approximately 1 mm2. The devices without any kind of electrically active 3-D structural defects demonstrated breakdown voltages close to theoretical values, ~500 V for the APD Type I and ~1200 V for Type II APD. Stability of Type I devices was tested by applying a short pulse of high voltage (~800 V). EBIC images, taken prior to and after the failure test, showed new defects in the dislocation free area, which, presumably, were caused by thermal breakdown.