Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
Dislocations were tracked from 4H-SiC epilayer to the substrate by a new method based on combination of molten KOH etching and Reactive Ion Etching. It was found that basal plane dislocations (BPDs) with dislocation lines parallel (or approximately parallel) to the off-cut direction might propagate as BPDs into the epilayer, while those with dislocation lines forming large angles (>10º) with the off-cut direction will get converted to threading edge dislocations (TEDs). A model is proposed to explain the observations.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Z. H. Zhang et al., "Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?", Materials Science Forum, Vols. 527-529, pp. 419-422, 2006