Structure of “Star” Defect in 4H-SiC Substrates and Epilayers

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The structure of the “star” defect in 4H-SiC substrates and its effects on the extended defect structures in the epilayers were studied by molten KOH etching and transmission x-ray topography. Star defects consist of a center region with high densities of threading dislocations (both edge and screw types) and six arms of dislocation arrays extending along <11-20> directions. In addition, multiple linear dislocation arrays extending perpendicular to the off-cut direction were observed in the epilayers. Dislocation arrays extending along <11-20> directions are consistent with the slip bands generated by the prismatic slip: a/3<11-20>{1-100}. Bands of linear dislocation arrays extending perpendicular to the off-cut direction correspond to the threading edge dislocations nucleated during epitaxial growth.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

403-406

Citation:

J. W. Lee and M. Skowronski, "Structure of “Star” Defect in 4H-SiC Substrates and Epilayers", Materials Science Forum, Vols. 527-529, pp. 403-406, 2006

Online since:

October 2006

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$38.00

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DOI: https://doi.org/10.1016/s0022-0248(00)00488-7

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