Structure of “Star” Defect in 4H-SiC Substrates and Epilayers

Jae Won Lee; Marek Skowronski

doi:10.4028/www.scientific.net/MSF.527-529.403

Paper Titles

Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
p.387

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
p.391

Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
p.395

Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
p.399

Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
p.403

Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415

Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Structure of “Star” Defect in 4H-SiC Substrates...

Structure of “Star” Defect in 4H-SiC Substrates and Epilayers

Abstract:

The structure of the “star” defect in 4H-SiC substrates and its effects on the extended defect structures in the epilayers were studied by molten KOH etching and transmission x-ray topography. Star defects consist of a center region with high densities of threading dislocations (both edge and screw types) and six arms of dislocation arrays extending along <11-20> directions. In addition, multiple linear dislocation arrays extending perpendicular to the off-cut direction were observed in the epilayers. Dislocation arrays extending along <11-20> directions are consistent with the slip bands generated by the prismatic slip: a/3<11-20>{1-100}. Bands of linear dislocation arrays extending perpendicular to the off-cut direction correspond to the threading edge dislocations nucleated during epitaxial growth.