A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC

Abstract:

The effects of initial surface morphology on the early stages of porous SiC formation under highly biased photoelectrochemical etching conditions are discussed. We etched both Si-face and C-face polished n-type 6H SiC with different surface finishes prepared either by mechanical polishing or by chemical mechanical polishing at NOVASiC. For both Si-face and C-face porous SiC samples, a variety of surface and cross sectional porous morphologies, due to different surface finishes, are observed. The proposed explanation is based on the spatial distribution of holes at the interface of the SiC and electrolyte inside the semiconductor.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 743-746
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.743
• Online since: October 2006
• Authors: Yue Ke, Catherine Moisson, S. Gaan, R.M. Feenstra, Robert P. Devaty, Wolfgang J. Choyke
• Keywords: Chemical Mechanical Polishing (CMP), Etching, Photoelectrochemical, Porous, Surface

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