Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements

Martin Rambach; Lothar Frey; Anton J. Bauer; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.527-529.827

Paper Titles

Correlation between Current Transport and Defects in n⁺/p 6H-SiC Diodes
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Current Analysis of Ion Implanted p⁺/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient
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Ion Implanted p⁺/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
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Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes
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Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
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Variations in the Effects of Implanting Al at Different Concentrations into SiC
p.831

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
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Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Extracting Activation and Compensation Ratio from...

Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements

Abstract:

Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms. Usually, this is done by Hall measurements. The preparation of Hall samples and temperature dependent Hall measurements, however, are rather complex compared to, e.g., temperature dependent resistivity measurements by 4-point probing. Therefore, a model for extracting relevant electrical parameters from resistivity data has been developed. The model is based on the neutrality equation and a temperature dependent mobility model.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

827-830

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.827

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Online since:

October 2006

Authors:

Martin Rambach, Lothar Frey, Anton J. Bauer, Heiner Ryssel

Keywords:

Activation, Compensation, Modeling, p-Doping, Resistivity

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References

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DOI: 10.4028/www.scientific.net/msf.433-436.443

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