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Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature

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Abstract:

Effects of the O2/Ar flow ratio in the reactive sputtering process and the annealing temperature on the structure and surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si MOS capacitors in which the ZrO2 film was deposited by magnetron sputtering have been investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered- ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized is the O2/Ar flow ratio of 1.5 and the annealing temperature of 800°C

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Periodical:

Materials Science Forum (Volumes 544-545)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.544-545.937

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Online since:

May 2007

Authors:

Chong Mu Lee, Anna Park, Su Young Park, Min Woo Park

Keywords:

C-V, Gate Dielectrics, I-V, RF Magnetron Sputtering, Zro2

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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