Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature

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Effects of the O2/Ar flow ratio in the reactive sputtering process and the annealing temperature on the structure and surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si MOS capacitors in which the ZrO2 film was deposited by magnetron sputtering have been investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered- ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized is the O2/Ar flow ratio of 1.5 and the annealing temperature of 800°C

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Periodical:

Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee

Pages:

937-940

DOI:

10.4028/www.scientific.net/MSF.544-545.937

Citation:

C. M. Lee et al., "Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature", Materials Science Forum, Vols. 544-545, pp. 937-940, 2007

Online since:

May 2007

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$38.00

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