Photoluminescence of 6H-SiC Nanostructures

Jacques Botsoa; Jean Marie Bluet; Vladimir Lysenko; Olivier Marty; Daniel Barbier; Gérard Guillot

doi:10.4028/www.scientific.net/MSF.556-557.407

Paper Titles

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395

Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
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Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
p.403

Photoluminescence of 6H-SiC Nanostructures
p.407

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
p.411

Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
p.415

Reverse Biased Electrochemical Etching of SiC-SBD
p.419

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
p.423

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Photoluminescence of 6H-SiC Nanostructures

Photoluminescence of 6H-SiC Nanostructures

Abstract:

Photoluminescence properties of a freestanding nanoporous SiC layer obtained from bulk 6H-SiC substrate as well as SiC nanopowder consisting of numerous separated nanoparticles has been investigated. The nanoporous SiC layer is obtained by UV radiation assisted electrochemical etching of the 6H-SiC wafer and the SiC nanopowder is formed by mechanical grinding of the nanoporous SiC free layer. A comparison of low temperature PL spectra of the SiC nanostructures and initial SiC bulk substrate has been performed. The evolution of PL spectra of the SiC nanostructures with respect to their surface states and excitation laser power has been studied. In particular, the well pronounced high energy tail above the excitonic bandgap in the PL spectra of the nanostructured SiC is attributed to quantum confinement effects. The strong PL signal obtained below the bandgap is explained by radiative transitions involving surface states, N-Al donoracceptor recombination levels and deep levels corresponding to volume defects in the SiC nanocrystallites.

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Materials Science Forum (Volumes 556-557)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.407

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Online since:

September 2007

Authors:

Jacques Botsoa, Jean Marie Bluet, Vladimir Lysenko, Olivier Marty, Daniel Barbier, Gérard Guillot

Keywords:

6H-SiC Nanostructures, Photoluminescence (PL)

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