Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111) epilayer grown by VLS (vapour-liquidsolid) mechanism on 6H-SiC (0001). The measurements of bipolar diffusion coefficient D and carrier lifetime τR in the samples at various pump energies (0.5 – 3.0 mJ/cm2) and temperatures (9 – 300 K) provided the values of bipolar mobility of ~ 80 cm2/Vs and τR = 1.5 - 2.0 ns at 300 K. The ionized impurity scattering, dominant at T < 100 K, and carrier-density dependent lifetimes in 10- 300 K range were attributed to contribution of trapping centers which electrical activity saturates at high carrier density.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
K. Neimontas et al., "Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range", Materials Science Forum, Vols. 556-557, pp. 395-398, 2007