Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range

K. Neimontas; Kęstutis Jarašiūnas; Maher Soueidan; Gabriel Ferro; Yves Monteil

doi:10.4028/www.scientific.net/MSF.556-557.395

Paper Titles

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
p.383

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395

Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
p.399

Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
p.403

Photoluminescence of 6H-SiC Nanostructures
p.407

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
p.411

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC...

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range

Abstract:

We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111) epilayer grown by VLS (vapour-liquidsolid) mechanism on 6H-SiC (0001). The measurements of bipolar diffusion coefficient D and carrier lifetime τR in the samples at various pump energies (0.5 – 3.0 mJ/cm2) and temperatures (9 – 300 K) provided the values of bipolar mobility of ~ 80 cm2/Vs and τR = 1.5 - 2.0 ns at 300 K. The ionized impurity scattering, dominant at T < 100 K, and carrier-density dependent lifetimes in 10- 300 K range were attributed to contribution of trapping centers which electrical activity saturates at high carrier density.

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Materials Science Forum (Volumes 556-557)

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395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.395

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Online since:

September 2007

Authors:

K. Neimontas, Kęstutis Jarašiūnas, Maher Soueidan, Gabriel Ferro, Yves Monteil

Keywords:

3H-SiC, Carrier Lifetime, Carrier Scattering, Diffusion Coefficient, Mobility

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References

[1] K. Neimontas, R. Aleksiejūnas, M. Sūdžius, K. Jarašiūnas and J.P. Bergman: Mater. Sci. Forum Vol. 483-485 (2005), p.413.

DOI: 10.4028/www.scientific.net/msf.483-485.413

Google Scholar

[2] K. Neimontas, T. Malinauskas, R. Aleksiejūnas, M. Sūdžius, K. Jarašiūnas, L. Storasta, J. P. Bergman and E. Janzen: Semicond. Sci. Technol., Vol. 21 (2006), p.952.

DOI: 10.1088/0268-1242/21/7/021

Google Scholar

[3] F. Ciobanu, G. Pensl, H. Nagasawa, A. Schöner, S. Dimitrijev, K.Y. Cheong, V. V. Afanas'ev, G. Wagner: Mater. Sci. Forum Vol. 433-436 (2003), p.551.

DOI: 10.4028/www.scientific.net/msf.433-436.551

Google Scholar

[4] M. Soueidan and G. Ferro: Adv. Funct. Mater. 16 (7), (2006) p.975.

Google Scholar

[5] H. J. Eichler, P. Gunter and D. W. Pohl: Laser-induced dynamic gratings (Optical Sciences 50 1986).

Google Scholar

[6] M. Yamanaka, H. Daimon, E. Sakuma, S. Misawa and S. Yoshida: J. Appl. Phys. Vol. 61(2) (1987), p.599.

Google Scholar

[7] K. Neimontas, T. Malinauskas, R. Aleksiejūnas, R. Yakimova and K. Jarašiūnas: Lithuanian J. Phys. Vol. 46(2) (2006), p.199.

Google Scholar