Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Hideharu Matsuura; Nobumasa Minohara; Yusuke Inagawa; Miyuki Takahashi; Takeshi Ohshima; Hisayoshi Itoh

doi:10.4028/www.scientific.net/MSF.556-557.379

Paper Titles

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
p.363

Impurity Conduction in Silicon Carbide
p.367

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
p.371

Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
p.383

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395

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Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Abstract:

From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200 keV electrons, the density of Al acceptors with 0.2 V E + eV decreases significantly with increasing fluence, whereas the density of unknown defects with 0.37 V E + eV increases with fluence and then decreases slightly. Although only C vacancies increase with fluence because 200 keV electrons can displace only C atoms, only the increase in the density of C monovacancies cannot explain the changes of p(T) by 200 keV electron irradiation. It may be necessary to consider the relationship between C vacancies and Al acceptors.