Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

Abstract:

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The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

371-374

DOI:

10.4028/www.scientific.net/MSF.556-557.371

Citation:

A. Gällström et al., "Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 371-374, 2007

Online since:

September 2007

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Price:

$35.00

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