Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

Andreas Gällström; Björn Magnusson; Patrick Carlsson; Nguyen Tien Son; Anne Henry; Franziska Christine Beyer; Mikael Syväjärvi; Rositza Yakimova; Erik Janzén

doi:10.4028/www.scientific.net/MSF.556-557.371

Paper Titles

EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
p.355

Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
p.359

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
p.363

Impurity Conduction in Silicon Carbide
p.367

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
p.371

Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
p.383

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Influence of Cooling Rate after High Temperature...

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

Abstract:

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.