Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

Nada Habka; Véronique Soulière; Jean Marie Bluet; Maher Soueidan; Gabriel Ferro; Yves Monteil

doi:10.4028/www.scientific.net/MSF.556-557.403

Paper Titles

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
p.387

Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
p.391

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
p.395

Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
p.399

Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
p.403

Photoluminescence of 6H-SiC Nanostructures
p.407

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
p.411

Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
p.415

Reverse Biased Electrochemical Etching of SiC-SBD
p.419

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Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

Abstract:

We report an optical investigation of cubic Silicon Carbide (3C-SiC) layers grown on 6H-SiC substrates by Chemical Vapour Deposition and Vapour-Liquid-Solid mechanism. Micro- Infrared reflectance ('-IR), micro-Raman ('-Raman) and low temperature photoluminescence spectroscopies were used for the characterisation of such layers. '-IR measurements showed unusual optical behaviour of 3C-SiC layers. The difference of refraction index between the 3C-SiC film and the 6H-SiC substrate cannot explain this result. The experimental '-IR reflectance spectrum was modelled by introducing a thin (thickness ≤ 0.5 'm) metallic-like (doping ≥ 1020 at.cm-3) interfacial film between the layer and the substrate. The photoluminescence spectra revealed the presence of a peak which may be attributed to recombination at the 3C/6H interface. All these results suggest the presence of a two dimensional electron gas at the interface.