Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

Abstract:

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We report an optical investigation of cubic Silicon Carbide (3C-SiC) layers grown on 6H-SiC substrates by Chemical Vapour Deposition and Vapour-Liquid-Solid mechanism. Micro- Infrared reflectance ('-IR), micro-Raman ('-Raman) and low temperature photoluminescence spectroscopies were used for the characterisation of such layers. '-IR measurements showed unusual optical behaviour of 3C-SiC layers. The difference of refraction index between the 3C-SiC film and the 6H-SiC substrate cannot explain this result. The experimental '-IR reflectance spectrum was modelled by introducing a thin (thickness ≤ 0.5 'm) metallic-like (doping ≥ 1020 at.cm-3) interfacial film between the layer and the substrate. The photoluminescence spectra revealed the presence of a peak which may be attributed to recombination at the 3C/6H interface. All these results suggest the presence of a two dimensional electron gas at the interface.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

403-406

DOI:

10.4028/www.scientific.net/MSF.556-557.403

Citation:

N. Habka et al., "Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS", Materials Science Forum, Vols. 556-557, pp. 403-406, 2007

Online since:

September 2007

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$35.00

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