Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

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We have simultaneously determined the carrier concentration, mobility, and thickness of 4H-SiC homo-epilayers with carrier concentration of 1016–1018 cm-3 from reflectance spectroscopy in the wavenumber range of 20–2000 cm-1. The spectra at 20–100 cm-1 and at 80–2000 cm-1 were measured by using the terahertz time domain spectrometer (THz-TDS) and the Fourier-transform infrared (FTIR) spectrometer, respectively. A modified classical dielectric function (MDF) model was employed for the curve fitting. We have compared the values of free carrier concentrations estimated from the reflectance spectroscopy with the net doping concentrations obtained from C–V measurements, and have discussed the validity of the electrical properties estimated from the reflectance spectroscopy.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

423-426

Citation:

S. Oishi et al., "Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy", Materials Science Forum, Vols. 556-557, pp. 423-426, 2007

Online since:

September 2007

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$38.00

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[6] J. Nishio et al: Mater. Sci. Forum Vol. 389-393 (2002), p.215. Fig. 2. The carrier concentration estimated from the reflectance spectra as a function of doping concentration obtained from C-V measurements.

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