The Premature Breakdown in 6H-SiC p-n Junction
In the 6H-SiC p+-n--n+ junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature increase and illumination by light with energy greater than the bandgap energy of 6H-SiC. The breakdown field appears to be 20% less than the intrinsic breakdown field in these structures.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
V. I. Sankin et al., "The Premature Breakdown in 6H-SiC p-n Junction", Materials Science Forum, Vols. 556-557, pp. 431-434, 2007