The Premature Breakdown in 6H-SiC p-n Junction

Vladimir Ilich Sankin; Andrey M. Monakhov; Pavel P. Shkrebiy

doi:10.4028/www.scientific.net/MSF.556-557.431

Paper Titles

Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
p.415

Reverse Biased Electrochemical Etching of SiC-SBD
p.419

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
p.423

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
p.427

The Premature Breakdown in 6H-SiC p-n Junction
p.431

Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
p.435

Point Defects and their Aggregation in Silicon Carbide
p.439

A Theoretical Study on Aluminium-Related Defects in SiC
p.445

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
p.449

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557The Premature Breakdown in 6H-SiC p-n Junction

The Premature Breakdown in 6H-SiC p-n Junction

Abstract:

In the 6H-SiC p+-n--n+ junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature increase and illumination by light with energy greater than the bandgap energy of 6H-SiC. The breakdown field appears to be 20% less than the intrinsic breakdown field in these structures.