The Premature Breakdown in 6H-SiC p-n Junction

Abstract:

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In the 6H-SiC p+-n--n+ junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature increase and illumination by light with energy greater than the bandgap energy of 6H-SiC. The breakdown field appears to be 20% less than the intrinsic breakdown field in these structures.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

431-434

Citation:

V. I. Sankin et al., "The Premature Breakdown in 6H-SiC p-n Junction", Materials Science Forum, Vols. 556-557, pp. 431-434, 2007

Online since:

September 2007

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$38.00

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[2] V.I. Sankin: Fizika i Tekhnika Poluprovodnikov Vol. 36 (2002), p.769, (Semiconductors Vol. 36, (2002), p.717.

[3] R.A. Suris, B.S. Shchamkhalova: Fiz. Tekh. Poluprovodn. (Leningrad) Vol. 18 (1984), p.178 (Soviet Phys. Semiconductors Vol. 18 (1984), p.738.

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