Point Defects and their Aggregation in Silicon Carbide

Abstract:

Article Preview

The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

439-444

Citation:

A. Gali et al., "Point Defects and their Aggregation in Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 439-444, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] A. Gali et al.: Mater. Sci. Forum Vol. 527-529 (2006), p.523.

[2] N. T. Son: private communication.

[3] A. Gali et al.: Phys. Rev. B Vol. 68 (2003), p.125201.

[4] T. Umeda et al.: Phys. Rev. B Vol. 70 (2004), p.235212.

[5] N. T. Son et al.: Phys. Rev. Lett. Vol. 96 (2006), p.055501.

[6] E. Rauls et al.: Phys. Rev. B Vol. 68 (2003), p.155208.

[7] M. Bockstedte, A. Mattausch and O. Pankratov: Phys. Rev. B Vol. 68 (2003), p.205201.

[8] T. Umeda et al.: Phys. Rev. Lett. Vol. 96 (2006), p.145501.

[9] T. Umeda et al.: this conference.

[10] The difference in the calculated LDA values and the experimental data is within the range of the typical error bar of LDA.

[11] T. Hornos et al.: this conference.

[12] Y. Negoro, T. Kimoto and H. Matsunami: J. Appl. Phys. Vol. 85 (2005), p.043709.

[13] K. Danno, T. Kimoto and H. Matsunami: Appl. Phys. Lett. Vol. 86 (2005), p.122104.

[14] Z. Zolnai et al.: J. Appl. Phys. Vol. 96 (2004), p.2406.

[15] A. Mattausch et al.: Phys. Rev. B Vol. 73 (2006), p. R161201.

[16] T. Dalibor et al.: Diamond and Related Mater. Vol. 6 (1997), p.1333.

[17] C. G. Hemmingsson et al.: Phys. Rev. B Vol. 58 (1998), p. R10119.