Paper Titles

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
p.423

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
p.427

The Premature Breakdown in 6H-SiC p-n Junction
p.431

Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
p.435

Point Defects and their Aggregation in Silicon Carbide
p.439

A Theoretical Study on Aluminium-Related Defects in SiC
p.445

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
p.449

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
p.453

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
p.457

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Point Defects and their Aggregation in Silicon...

Point Defects and their Aggregation in Silicon Carbide

Article Preview

Abstract:

The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2006

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

439-444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.439

Citation:

Cite this paper

Online since:

September 2007

Authors:

Adam Gali, T. Hornos, M. Bockstedte, Thomas Frauenheim

Keywords:

Ab Initio Hyperfine Signature, Interstitial, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] A. Gali et al.: Mater. Sci. Forum Vol. 527-529 (2006), p.523.

[2] N. T. Son: private communication.

[3] A. Gali et al.: Phys. Rev. B Vol. 68 (2003), p.125201.

[4] T. Umeda et al.: Phys. Rev. B Vol. 70 (2004), p.235212.

[5] N. T. Son et al.: Phys. Rev. Lett. Vol. 96 (2006), p.055501.

[6] E. Rauls et al.: Phys. Rev. B Vol. 68 (2003), p.155208.

[7] M. Bockstedte, A. Mattausch and O. Pankratov: Phys. Rev. B Vol. 68 (2003), p.205201.

[8] T. Umeda et al.: Phys. Rev. Lett. Vol. 96 (2006), p.145501.

[9] T. Umeda et al.: this conference.

[10] The difference in the calculated LDA values and the experimental data is within the range of the typical error bar of LDA.

[11] T. Hornos et al.: this conference.

[12] Y. Negoro, T. Kimoto and H. Matsunami: J. Appl. Phys. Vol. 85 (2005), p.043709.

[13] K. Danno, T. Kimoto and H. Matsunami: Appl. Phys. Lett. Vol. 86 (2005), p.122104.

[14] Z. Zolnai et al.: J. Appl. Phys. Vol. 96 (2004), p.2406.

[15] A. Mattausch et al.: Phys. Rev. B Vol. 73 (2006), p. R161201.

[16] T. Dalibor et al.: Diamond and Related Mater. Vol. 6 (1997), p.1333.

[17] C. G. Hemmingsson et al.: Phys. Rev. B Vol. 58 (1998), p. R10119.