Point Defects and their Aggregation in Silicon Carbide

Abstract:

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The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

439-444

DOI:

10.4028/www.scientific.net/MSF.556-557.439

Citation:

A. Gali et al., "Point Defects and their Aggregation in Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 439-444, 2007

Online since:

September 2007

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Price:

$35.00

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