High Temperature Implantation of Aluminum in 4H Silicon Carbide
The influence of the implantation temperature on the surface roughness and the resistivity of aluminum implanted 4H-silicon carbide was determined. A dose of 1.2 ⋅1015cm-2 aluminum ions was implanted at temperatures between room temperature and 1000°C. A decrease of the surface roughness down to an rms-value of 12nm and a decrease in the resistivity down to 0.35Wcm were found with increasing implantation temperature. The influence of the implantation temperature on the resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase in mobility with temperature due to the reduction of compensation centers.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
M. Rambach et al., "High Temperature Implantation of Aluminum in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 587-590, 2007