High Temperature Implantation of Aluminum in 4H Silicon Carbide

Martin Rambach; Anton J. Bauer; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.556-557.587

Paper Titles

Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process
p.571

Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
p.575

Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
p.579

Encapsulating Annealing of N⁺ Implanted 4H-SiC by Diamond-Like-Carbon Film
p.583

High Temperature Implantation of Aluminum in 4H Silicon Carbide
p.587

Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
p.591

Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
p.595

Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with ³⁰Si Isotope: Electron Paramagnetic Resonance Study
p.599

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
p.603

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High Temperature Implantation of Aluminum in 4H Silicon Carbide

Abstract:

The influence of the implantation temperature on the surface roughness and the resistivity of aluminum implanted 4H-silicon carbide was determined. A dose of 1.2 ⋅1015cm-2 aluminum ions was implanted at temperatures between room temperature and 1000°C. A decrease of the surface roughness down to an rms-value of 12nm and a decrease in the resistivity down to 0.35Wcm were found with increasing implantation temperature. The influence of the implantation temperature on the resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase in mobility with temperature due to the reduction of compensation centers.