Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

591-594

DOI:

10.4028/www.scientific.net/MSF.556-557.591

Citation:

G. Alfieri and T. Kimoto, "Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 591-594, 2007

Online since:

September 2007

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$35.00

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