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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Isochronal Annealing Study of Deep Levels in...

Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

591-594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.591

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Online since:

September 2007

Authors:

Giovanni Alfieri, Tsunenobu Kimoto

Keywords:

4H-SiC, DLTS, Hydrogen, Implantation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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