Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching

S. Takenami; Tomoaki Hatayama; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.556-557.733

Paper Titles

Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes
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Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
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Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition
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Plasma Etching for Backside Wafer Thinning of SiC
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Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl₂-O₂ Thermal Etching
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The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts
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Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC
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Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films
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Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
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Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl₂-O₂ Thermal Etching

Abstract:

Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by a Cl2-O2 thermal etching method. The etching rate of 4H-SiC (000-1) C face was 10 times faster than that of (0001) Si face, and the etching rate at 910oC was about 18μm/h. The etched surface was rather smooth, and the sidewall of the mesa was inclined to the off-axis substrate. Taking into account the off angle of about 8o toward [11-20] off direction, the angles of the sidewalls were 52-56o for the <1-100> and 55-57o for the <11-20> directions from the crystallographically accurate (000-1) C face. Epitaxial pn junction diodes with the sloped sidewalls structure were fabricated, which had good electrical properties.