High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain

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Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1181-1184

DOI:

10.4028/www.scientific.net/MSF.561-565.1181

Citation:

T. Sadoh et al., "High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain", Materials Science Forum, Vols. 561-565, pp. 1181-1184, 2007

Online since:

October 2007

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$35.00

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