Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry
This paper updates the long-term 500 °C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 °C with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 °C before failure.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
P. G. Neudeck et al., "Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry", Materials Science Forum, Vols. 615-617, pp. 929-932, 2009