Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

Philip G. Neudeck; David J. Spry; Liang Yu Chen; Carl W. Chang; Glenn M. Beheim; Robert S. Okojie; Laura J. Evans; Roger D. Meredith; Terry L. Ferrier; Michael J. Krasowski; Norman F. Prokop

doi:10.4028/www.scientific.net/MSF.615-617.929

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HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Prolonged 500 °C Operation of 6H-SiC JFET...

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

Abstract:

This paper updates the long-term 500 °C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 °C with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 °C before failure.