Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
P. Caban et al., "Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut", Materials Science Forum, Vols. 615-617, pp. 939-942, 2009