Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Piotr Caban; Kinga Kościewicz; Wlodek Strupiński; Jan Szmidt; Karolina Pagowska; Renata Ratajczak; Marek Wojcik; Jaroslaw Gaca; Andrzej Turos

doi:10.4028/www.scientific.net/MSF.615-617.939

Paper Titles

Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications
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300°C SiC Blocking Diodes for Solar Array Strings
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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry
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GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
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Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
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Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates
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Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
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Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
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Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
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HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Structural Characterization of GaN Epitaxial...

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Abstract:

The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.