Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions

Abstract:

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Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application in GaN HEMTs. Lowest resistivity of 4.22x10-5 Ω.cm2 has been obtained to the channel of the HEMT structure. It is found out that the initial Ti/Al ratio influences the optimal annealing temperature at which the lowest resistivity is obtained and the element distribution and interface chemistry of the annealed contacts. XPS analysis revealed two compounds contributing to ohmic properties: an intermetal compound AlAu2 in the contact layer and a semimetal TiN at the interface with GaN.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

951-954

DOI:

10.4028/www.scientific.net/MSF.615-617.951

Citation:

L. Kolaklieva et al., "Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions", Materials Science Forum, Vols. 615-617, pp. 951-954, 2009

Online since:

March 2009

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$35.00

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