Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire

Abstract:

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In this work, Ti/Al bilayer sputtered ohmic contacts on n-type Gallium Nitride films were studied as a function of process parameters such as Ti thickness, surface cleaning procedure or annealing temperature. Epilayers, with doping concentration of 5.8x1018 at.cm-3, were grown on sapphire using AlN buffer layer. Electrical characterizations were made using circular Transfer Length Method (cTLM) patterns with a four probes equipment. Specific Contact Resistance (SCR) was then extracted for all the process conditions. Our results show that surface treatment is not a critical step in the ohmic contact process while annealing temperature has a larger impact. Finally, SCR values of 1x10-5 Ω.cm2 can be reproducibly achieved, which is of high interest for future devices fabrication using this material.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

955-958

DOI:

10.4028/www.scientific.net/MSF.615-617.955

Citation:

O. Ménard et al., "Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire", Materials Science Forum, Vols. 615-617, pp. 955-958, 2009

Online since:

March 2009

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Price:

$35.00

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