High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Young Hwan Choi; Ji Yong Lim; Kyu Heon Cho; Young Shil Kim; Min Koo Han

doi:10.4028/www.scientific.net/MSF.615-617.971

Paper Titles

Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
p.955

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
p.959

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure
p.963

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
p.967

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
p.971

Two Broadband GaN MMIC Power Amplifiers for EW Systems
p.975

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
p.979

Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
p.983

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
p.987

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High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Abstract:

AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any sacrifice of the forward electrical characteristics were proposed and fabricated. The tapered structure was fabricated by the wet etching process. The depletion region of the proposed structure expands toward the slope of the tapered field plate and the electric field concentration at the gate edge can be successfully suppressed. The gate leakage current of proposed device at VGS= -5 V and VDS= 100 V was decreased by 2-3 orders compared with that of the conventional one. The breakdown voltage of proposed device was 880 V while that of conventional one was 548 V.