Two Broadband GaN MMIC Power Amplifiers for EW Systems

M. Angeles Gonzalez-Garrido; Jesus Grajal; Pablo Cubilla; Claudio Lanzieri; Antonio Cetronio

doi:10.4028/www.scientific.net/MSF.615-617.975

Paper Titles

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
p.959

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure
p.963

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
p.967

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
p.971

Two Broadband GaN MMIC Power Amplifiers for EW Systems
p.975

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
p.979

Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
p.983

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
p.987

Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD
p.991

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Two Broadband GaN MMIC Power Amplifiers for EW...

Two Broadband GaN MMIC Power Amplifiers for EW Systems

Abstract:

This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.