Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD

Yoshiaki Mokuno; Akiyoshi Chayahara; Hideaki Yamada; Nobuteru Tsubouchi

doi:10.4028/www.scientific.net/MSF.615-617.991

Paper Titles

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
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Two Broadband GaN MMIC Power Amplifiers for EW Systems
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Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
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Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
p.983

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
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Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD
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Metal Contacts to Boron-Doped Diamond
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Recent Progress of Diamond Device toward Power Application
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Device Characteristics Dependence on Diamond SDBs Area
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Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD

Abstract:

Recent developments in producing large single crystal CVD diamond plates are reviewed. The developments consist of synthesis of large single crystal diamond and production of single crystal diamond plates from the bulk diamond by the lift-off process. Combining these developments, half-inch single crystal CVD diamond plates have been successfully produced.

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Silicon Carbide and Related Materials 2008

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Materials Science Forum (Volumes 615-617)

Pages:

991-994

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.615-617.991

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Online since:

March 2009

Authors:

Yoshiaki Mokuno, Akiyoshi Chayahara, Hideaki Yamada, Nobuteru Tsubouchi

Keywords:

Diamond, Ion Implantation, Lift-Off, Microwave Plasma CVD, Single Crystal Growth

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