This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.