Metal Contacts to Boron-Doped Diamond

Abstract:

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This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

995-998

DOI:

10.4028/www.scientific.net/MSF.615-617.995

Citation:

M. Lodzinski et al., "Metal Contacts to Boron-Doped Diamond", Materials Science Forum, Vols. 615-617, pp. 995-998, 2009

Online since:

March 2009

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Price:

$35.00

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