Metal Contacts to Boron-Doped Diamond

Michal Lodzinski; Owen James Guy; A. Castaing; S. Batcup; S.P. Wilks; P. Igic; R.S. Balmer; C.J.H. Wort; R. Lang

doi:10.4028/www.scientific.net/MSF.615-617.995

Paper Titles

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
p.971

Two Broadband GaN MMIC Power Amplifiers for EW Systems
p.975

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
p.979

Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
p.983

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
p.987

Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD
p.991

Metal Contacts to Boron-Doped Diamond
p.995

Recent Progress of Diamond Device toward Power Application
p.999

Device Characteristics Dependence on Diamond SDBs Area
p.1003

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Metal Contacts to Boron-Doped Diamond

Metal Contacts to Boron-Doped Diamond

Abstract:

This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.