High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

Taku Horii; Tomihito Miyazaki; Yu Saito; Shin Hashimoto; Tatsuya Tanabe; Makoto Kiyama

doi:10.4028/www.scientific.net/MSF.615-617.963

Paper Titles

Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
p.947

Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
p.951

Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
p.955

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
p.959

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure
p.963

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
p.967

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
p.971

Two Broadband GaN MMIC Power Amplifiers for EW Systems
p.975

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
p.979

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High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

Abstract:

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.