Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
M. A. Borysiewicz et al., "Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN", Materials Science Forum, Vols. 615-617, pp. 947-950, 2009