Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN

Abstract:

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Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

947-950

DOI:

10.4028/www.scientific.net/MSF.615-617.947

Citation:

M. A. Borysiewicz et al., "Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN", Materials Science Forum, Vols. 615-617, pp. 947-950, 2009

Online since:

March 2009

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Price:

$35.00

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