Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN

Michał A. Borysiewicz; Eliana Kamińska; Anna Piotrowska; Iwona Pasternak; Rafał Jakieła; Elżbieta Dynowska

doi:10.4028/www.scientific.net/MSF.615-617.947

Paper Titles

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry
p.929

GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
p.935

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
p.939

Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates
p.943

Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
p.947

Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
p.951

Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
p.955

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
p.959

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure
p.963

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Phase Formation in Ti-Al-N MAX-Phase Contacts to...

Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN

Abstract:

Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.