Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

Elena Tschumak; Katja Tonisch; Joerg Pezoldt; Donat J. As

doi:10.4028/www.scientific.net/MSF.615-617.943

Paper Titles

300°C SiC Blocking Diodes for Solar Array Strings
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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry
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GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
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Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
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Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates
p.943

Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
p.947

Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
p.951

Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
p.955

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
p.959

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Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

Abstract:

Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.