Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

Abstract:

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Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

943-946

DOI:

10.4028/www.scientific.net/MSF.615-617.943

Citation:

E. Tschumak et al., "Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates", Materials Science Forum, Vols. 615-617, pp. 943-946, 2009

Online since:

March 2009

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$35.00

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