Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH4 and Ar-CF4 Mixtures

Tatsunori Sugimoto; Toshiya Noro; Satarou Yamaguchi; Hideyoshi Majima; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.645-648.869

Paper Titles

Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC
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Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
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Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates
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Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
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Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH₄ and Ar-CF₄ Mixtures
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Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators
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Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
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A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses
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Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electric Discharge Machining for Silicon Carbide...

Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH₄ and Ar-CF₄ Mixtures

Abstract:

We report on the discharge gas of the electric discharge machining (EDM) for silicon carbide (SiC) single crystal. We investigated the cutting speed and the kerf loss of EDM for SiC by using three kinds discharge gases: Ar, Ar+CH4(10%) and Ar+CF4(10%). The maximum cutting speed of EDM in Ar, Ar+CH4(10%) and Ar+CF4(10%) was 0.02mm/min, 0.04 mm/min and 0.06 mm/min, respectively. The kerf loss of EDM in Ar, Ar+CH4(10%) and Ar+CF4(10%) was 490m, 430m and 470m, respectively. It is shown that cutting with a smooth edge and low kerf loss is faster by mixing CH4 or CF4 in Ar.