Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators

Gwiy Sang Chung; Kyu Hyung Yoon

doi:10.4028/www.scientific.net/MSF.645-648.873

Paper Titles

Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
p.857

Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates
p.861

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
p.865

Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH₄ and Ar-CF₄ Mixtures
p.869

Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators
p.873

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
p.879

A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses
p.885

Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
p.889

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
p.893

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Effect of In Situ Doped Nitrogen Concentrations on...

Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators

Abstract:

This paper describes the characteristics of polycrystalline 3C-SiC micro resonators with 3 ×1017 - 1×1019 cm-3 in-situ N-doping concentrations. In this work, the 1.2 μm thick cantilevers and the 0.4 μm thick doubly-clamped beam micro resonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC micro resonators were evaluated using quartz actuator and optical read-out vibrometer under vacuum conditions at room temperature. The resonant frequencies of the SiC micro resonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC micro- resonators are controllable by adjusting the doping concentrations.