A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses

Roland Rupp; Fanny Björk; Gerald Deboy; Matthias Holz; Michael Treu; Jochen Hilsenbeck; Ralf Otremba; Hannes Zeichen

doi:10.4028/www.scientific.net/MSF.645-648.885

Paper Titles

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
p.865

Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH₄ and Ar-CF₄ Mixtures
p.869

Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators
p.873

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
p.879

A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses
p.885

Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
p.889

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
p.893

4.6 kV, 10.5 mOhm×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
p.897

6.5 kV SiC PiN Diodes with Improved Forward Characteristics
p.901

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648A New Generation of SiC Schottky Diodes with...

A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses

Abstract:

With the help of an improved die attach the Rth,jc of SiC Schottky diodes can be reduced by 40-50% at a given chip size. This enables a significant higher power density for these SiC diode chips, resulting in a chip shrink of ~ 35% for a given nominal current. This has a significant impact not only on the cost position of the device but also on the switching performance of the diodes, as their capacitive charge directly scales with the chip area. Of course these advantages are accompanied by a small penalty in static losses as the Vf of the diodes at nominal current also slightly increases by the chip shrink. However, the reduction of switching losses dominates upon the marginally increased static losses besides full load operation conditions (which are pretty exceptional in today’s SiC Schottky diode applications) combined with frequencies below 130 kHz. This allows a better competitive positioning against fast Si-based diodes and improved system efficiency at the same time.