Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate

Bertrand Vergne; Sigo Scharnholz; Jens Peter Konrath; Vincent Couderc; Philippe Lévêque; Emil Spahn

doi:10.4028/www.scientific.net/MSF.645-648.917

Paper Titles

6.5 kV SiC PiN Diodes with Improved Forward Characteristics
p.901

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
p.905

Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
p.909

Analyses of High Leakage Currents in Al⁺ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
p.913

Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate
p.917

Charge Collection Efficiency of 6H-SiC P⁺N Diodes Degraded by Low-Energy Electron Irradiation
p.921

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
p.925

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations
p.929

Fast Switching with SiC VJFETs - Influence of the Device Topology
p.933

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Preliminary Investigation of Laser Induced...

Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate

Abstract:

We present photoconductivity experiments on a 4H-SiC diode and on 4H-SiC high purity semi-insulating (HPSI) substrate. These devices have been tested over a wide optical wavelength range: 355 nm to 820 nm. The penetration depth of optical wavelength has been estimated from spectrophotometer measurements. Photoconductivity regime has been studied at low electrical field for both devices and photoconductivity efficiency has been compared to Si switches.