Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate

Abstract:

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We present photoconductivity experiments on a 4H-SiC diode and on 4H-SiC high purity semi-insulating (HPSI) substrate. These devices have been tested over a wide optical wavelength range: 355 nm to 820 nm. The penetration depth of optical wavelength has been estimated from spectrophotometer measurements. Photoconductivity regime has been studied at low electrical field for both devices and photoconductivity efficiency has been compared to Si switches.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

917-920

DOI:

10.4028/www.scientific.net/MSF.645-648.917

Citation:

B. Vergne et al., "Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate ", Materials Science Forum, Vols. 645-648, pp. 917-920, 2010

Online since:

April 2010

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$35.00

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