Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Gil Yong Chung; Mark J. Loboda; Siddarth G. Sundaresan; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.645-648.905

Paper Titles

Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
p.889

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
p.893

4.6 kV, 10.5 mOhm×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
p.897

6.5 kV SiC PiN Diodes with Improved Forward Characteristics
p.901

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
p.905

Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
p.909

Analyses of High Leakage Currents in Al⁺ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
p.913

Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate
p.917

Charge Collection Efficiency of 6H-SiC P⁺N Diodes Degraded by Low-Energy Electron Irradiation
p.921

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Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Abstract:

Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of fully processed PiN diodes. Measured carrier lifetime and of PiN diodes also show good spatial correlation. Wafer level lifetime mapping can be employed to assess and predict of PiN diodes.