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Materials Science Forum
Vols. 65-66
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Materials Science Forum Vols. 65-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66

ToC:

Table of Contents

Paper Title Page

Interaction of Phosphorus with Dislocation Cores in Silicon
Authors: M.I. Heggie, R. Jones, A. Umerski
265
Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities
Authors: Ya.E. Pokrovskii, O.I. Smirnova
271
Iron- and Chromium-Indium Pairs in Silicon
Authors: U. Reislöhner, W. Witthuhn
281
Ab Initio Calculations on Interstitial O Clusters in Si
Authors: R. Jones, Sven Öberg, A. Umerski
287
Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results
Authors: K.K. Larsen, Arne Nylandsted Larsen
293
Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si
Authors: Z.G. Gogua
299
On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
Authors: Werner Puff, S. Dannefaer
307
The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium
Authors: G. Piao, R.A. Lewis, P. Fisher
313
Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium
Authors: G.J. Takacs, P. Fisher, C.A. Freeth
323
Spectral Dependence of the Shallow Impurity Optical Absorption Cross Section in Germanium
Authors: E.G. Chirkova, Yu.P. Druzhinin
329

Showing 41 to 50 of 73 Paper Titles