Current Steps in Poly(3-Hexylthiophene)/ZnO Nanobelt Hybrid Diodes

Wen Guo; Ya Yang; Jun Jie Qi; Yue Zhang

doi:10.4028/www.scientific.net/MSF.654-656.1158

Paper Titles

Synthesis and Characterization of CdSe Microspheres via Solvothermal Process
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Investigation on the Plasma-Induced Electron Emission Properties of ZnO Nanorod and Carbon Nanotube Arrays
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The Characterization and Gas Sensing Properties of Polythiophene Coated V₂O₅ Nanotubes
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Current Steps in Poly(3-Hexylthiophene)/ZnO Nanobelt Hybrid Diodes
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Mechanical Properties of Electrodeposited Ni-SiO₂ Nanocomposite
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Modelling the Crystallization Reactions of Amorphous Precursors in Fe₃B/Nd₂Fe₁₄B Nanocomposite Magnets
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New Crystallographic Textures of Nd₂Fe₁₄B/α-Fe Nanocomposite Materials Prepared by Controlled Melt Spinning
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Effect of Organic Capping on the Magnetic Properties of Au Nanoparticles
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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Current Steps in Poly(3-Hexylthiophene)/ZnO...

Current Steps in Poly(3-Hexylthiophene)/ZnO Nanobelt Hybrid Diodes

Abstract:

We report the poly(3iophene) (P3HT)/ZnO nanobelt hybrid p-n junction diodes characterized by using a conductive atomic force microscope (C-AFM). The diodes exhibited a turn-on voltage of about 2.5 V and ideality factor of about 11.6. The obvious current steps in the I-V characteristics under the reverse bias were clearly observed at room temperature. The origin of these steps is suggested to be attributed to the charge injection-trapping induced by nanoparticles on the surface of the ZnO nanobelt.

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Materials Science Forum (Volumes 654-656)

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1158-1161

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https://doi.org/10.4028/www.scientific.net/MSF.654-656.1158

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Online since:

June 2010

Authors:

Wen Guo, Ya Yang, Jun Jie Qi, Yue Zhang

Keywords:

Atomic Force Microscope (AFM), Nanobelts, P-N Junction, Poly(3iophene), Semiconductor, Zinc Oxide (ZnO)

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