Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

Abstract:

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

• Periodical: Materials Science Forum (Volume 694)
• Pages: 891-895
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.694.891
• Online since: July 2011
• Authors: Chien Chang Huang, Chun Chia Chen, Jian Kai Liou, Po Cheng Chou, Huey Ing Chen, Shiou Ying Cheng, Wen Chau Liu
• Keywords: Electroless Plating (EP), PHEMT, Temperature-Dependent Characteristic

References

[1] H. R. Chen, M. K. Hsu, S. Y. Chiu, W. T. Chen, G. H. Chen, Y. C. Chang, C. C. Su, and W. S. Lour: Semicond. Sci. Technol. Vol. 22 (2007), p.119.

[2] Y. S. Lin, B. Y. Chen, and C. H. Ho: J. Electrochem. Soc. Vol. 154 (2007), p. H951.

[3] H. Hasegawa and H. Ohno: J. Vac. Sci. & Technol. B Vol. 4 (1986), p.1130.

[4] H. I. Chen and Y. I. Chou: Semicond. Sci. Technol. Vol. 18 (2003), p.104.

[5] H. I. Chen, Y. I. Chou and C. Y. Chu: Sens. Actuators B Vol. 85 (2002), p.10.

[6] H. I. Chen, C. K. Hsiung and Y. I. Chou: Semicond. Sci. Technol. Vol. 18 (2003), p.620.

[7] H. C. Chiu, M. J. Hwu, S. C. Yang, and Y. J. Chan: IEEE Electron Device Letters, Vol. 23 (2002), p.243.

[8] H. C. Chiu, Y. C. Huang, C. W. Chen, and L. B. Chang: IEEE Trans. Electron Device., Vol. 55 (2008), p.721.

[9] T. Ytterdal, B. J. Moon, T. A. Fjeldly, and M. S. Shur: IEEE Trans. Electron Devices, Vol. 42, (1995), p.1724.

DOI: 10.1109/16.464426

[10] Y. S. Lin and B. Y. Chen: J. Electrochem. Soc. Vol. 154 (2007), p. H406.