Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process

Tetsuji Kato; Yoshiaki Nakamura; P.P.T.  Son; Jun Kikkawa; Akira Sakai

doi:10.4028/www.scientific.net/MSF.725.261

Paper Titles

Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)
p.243

Effect of Si₃N₄ Coating on Strain and Fracture of Si Ingots
p.247

Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction
p.251

MicroRaman Spectroscopy of Si Nanowires: Influence of Size
p.255

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO₃ Bicrystal Interface Induced by Forming Process
p.261

Structural and Electronic Structure of SnO₂ by the First-Principle Study
p.265

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga₂O₃ Films Deposited by the RF Magnetron Sputtering Method
p.269

Improvement of the Crystalline Quality of β-Ga₂O₃ Films by High-Temperature Annealing
p.273

Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution
p.277

HomeMaterials Science ForumMaterials Science Forum Vol. 725Electron-Beam-Induced Current Study of Electronic...

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO₃ Bicrystal Interface Induced by Forming Process

Abstract:

We investigated the spatial variation of energy band structure in a SrTiO₃ (001) bicrystal with the (100) 10° tilt boundary before and after the annealing process at 973 K under a vacuum of ~10^-7 Torr and after the subsequent forming process with electrical dielectric breakdown, using electron beam induced current (EBIC) method in the temperature range between 200 and 300K. Although the EBIC contrast at the tilt boundary was weak before and after the annealing, it became visible after the forming process and stronger as the observation temperature decreased to less than 260 K. It was found that the EBIC direction at the tilt boundary is opposite to that in the matrix, i.e. the single crystalline regions of both sides of the tilt boundary. In the matrix, the EBIC increased after the annealing and decreased again after the forming process. We propose energy band structures of the bicrystalline SrTiO₃ after the annealing and after the forming process.

You might also be interested in these eBooks

Defects-Recognition, Imaging and Physics in Semiconductors XIV

View Preview

Info:

Periodical:

Materials Science Forum (Volume 725)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.261

Citation:

Cite this paper

Online since:

July 2012

Authors:

Tetsuji Kato, Yoshiaki Nakamura, P.P.T. Son, Jun Kikkawa, Akira Sakai

Keywords:

Electron Beam Induced Current (EBIC), Forming Process, Strontitum Titanate, Tilt Boundary

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Watanabe et al., Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystal, Appl. Phys. Lett. 78 (2001) 3738.

DOI: 10.1063/1.1377617

Google Scholar

[2] K. Szot et al., Switching the electrical resistance of individual dislocations in single crystalline SrTiO3, Nature Materials 5 (2006) 312.

DOI: 10.1038/nmat1614

Google Scholar

[3] A. Sawa, Resistive switching in transition metal oxide, Materials Today 11 (2008) 28.

Google Scholar

[4] T. Kato, S. P. T. Pham, Y. Nakamura, J. Kikkawa and A. Sakai: submitted to publication.

Google Scholar

[5] Y. B. Hahn et al., Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture, J. Vac. Sci. Technol. A 17 (1999) 366.

DOI: 10.1116/1.590565

Google Scholar

[6] J. S. Kim et al., Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function, Synthetic Metals 111 (2000) 311.

DOI: 10.1016/s0379-6779(99)00354-9

Google Scholar