Improvement of the Crystalline Quality of β-Ga₂O₃ Films by High-Temperature Annealing

Abstract:

For the purpose of improving the crystalline quality of undoped and Si doped β-Ga₂O₃ films, high temperature annealing at 900°C was performed. The crystalline quality of the films investigated using scanning electron microscopy and X-ray diffraction. Also the conductivity of the films is compared before and after the annealing. After the 900°C annealing, the XRD peaks intensity corresponding to β-Ga₂O₃ is increased. This result indicates that the crystalline quality improves by the high temperature annealing.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 273-276
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.273
• Online since: July 2012
• Authors: Motoki Takahara, Suguru Funasaki, Jyun Kudou, Isao Tsunoda, Kenichiro Takakura, Hidenori Ohyama, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Eddy Simoen, Cor Claeys
• Keywords: EDX, Gallium Oxide, Impurity Doping, SEM, Sputtering, Transparent Conducting Oxide, X-Ray Diffraction (XRD)

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