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HomeMaterials Science ForumMaterials Science Forum Vol. 725Electrical Properties of Fluorine Doped Tin...

Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method

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Abstract:

Low resistivity, fluorine-doped tin dioxide thin films were deposited on glass substrates by spray pyrolysis. These films were prepared with different F-doping concentrations from 0 to 33 mol%. The structure of these films was investigated by X-ray diffraction and the surface morphology by Scanning Electron Microscopy. Sample compositions were evaluated using X-ray Photoemission Spectroscopy. According to these results, the films were all polycrystalline with tetragonal crystal structures. Hall measurements were used to probe the dependence of the resistivity on temperature for un-doped SnO₂ and F-doped SnO₂. The resistivity of un-doped SnO2 slightly increased with increasing temperature. Conversely, the resistivity of F-doped SnO₂ slightly decreased with increasing temperature.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

281-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.281

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Online since:

July 2012

Authors:

Minoru Oshima, Kenji Yoshino

Keywords:

FTO, Spray Pyrolysis, Transparent Conducting Oxide

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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