Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

Yuji Ino; Satoru Matsumoto; Suzuka Nishimura; Kazutaka Terashima

doi:10.4028/www.scientific.net/MSF.725.285

Paper Titles

MicroRaman Spectroscopy of Si Nanowires: Influence of Size
p.255

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO₃ Bicrystal Interface Induced by Forming Process
p.261

Structural and Electronic Structure of SnO₂ by the First-Principle Study
p.265

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga₂O₃ Films Deposited by the RF Magnetron Sputtering Method
p.269

Improvement of the Crystalline Quality of β-Ga₂O₃ Films by High-Temperature Annealing
p.273

Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution
p.277

Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method
p.281

Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide
p.285

Evaluation of Ge_xSb_yTe_z Film Grown by Chemical Vapor Deposition
p.289

HomeMaterials Science ForumMaterials Science Forum Vol. 725Effect of Si Doping on the Crystal Structure of...

Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

Abstract:

Boron Phosphide (BP) layers have been grown on Si (100) as a substrate for cubic GaN heteroepitaxy. Si heavy doping was attempted to reduce the threading dislocation density in the BP. To observe the effect on dislocations in BP by Si doping, we used cross-sectional transmission electron microscopy (XTEM). Also, Glow Discharge-Optical Emission Spectroscopy (GDOES) were used to evaluate the effect of Si doping. For the samples under the conditions (a) and (e), we found the formation of pits at BP surface and an increasing in the proportion of threading dislocations with an angle of 90 ° to the surface. We could not see a significant change in the threading dislocation density by Si doping under the conditions used in this paper.

You might also be interested in these eBooks

Defects-Recognition, Imaging and Physics in Semiconductors XIV

View Preview

Info:

Periodical:

Materials Science Forum (Volume 725)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.285

Citation:

Cite this paper

Online since:

July 2012

Authors:

Yuji Ino, Satoru Matsumoto, Suzuka Nishimura, Kazutaka Terashima

Keywords:

Boron Phosphide, Dislocation, Hydride Vapor Phase Epitaxy (HVPE), Si Doping, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Hadis Morkoç, Handbook of Nitride Semiconductors and Devices, Wiley-VCH, Berlin, 2008, Vol. 1, p.342.

Google Scholar

[2] L.T. Romano, in: J.H. Edgar, S.S. Strite, I. Akasaki, H. Amano (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, The Institution of Electrical Engineers, Stevenage, UK, 1999, p.209.

Google Scholar

[3] S. Nishimura and K. Terashima, Mater. Sci. Eng. B 82 (2001) 25-26 ; Mater. Sci. and Eng. B 75 (2000) 207–209; Appl. Surf. Sci. 159–160 (2000) 288–291.

Google Scholar

[4] L.I. Berger, Semiconductor Materials, CRC Press, Boca Raton, FL 1997, p.116.

Google Scholar

[5] K. Nozawa and Y. Horikoshi, Jpn. J. Appl. Phys. 28 (1989) L1877-L1879.

Google Scholar

[6] S. Tanaka, M. Takeuchi, and Y. Aoyagi, Jpn. J. Appl. Phys. 39 (2000) L831-L834.

Google Scholar

[7] F. R. N. Nabarro, Proc. Phys. Soc. 59 (1947) p.256.

Google Scholar

[8] H. J. McSkimin, J. Appl. Phys. 24 (1953) p.988.

Google Scholar

[9] W. Garland and K.C. Park, J. Appl. Phys. 33 (1962) p.759.

Google Scholar

[10] W. Wettling and J. Windschleif, Solid State Commun. 50 (1984) p.33.

Google Scholar