Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition

Seiti Hamada; Takafumi Horiike; Tomohiro Uno; Masato Ishikawa; Hideaki Machida; Yoshio Ohshita; Atsushi Ogura

doi:10.4028/www.scientific.net/MSF.725.289

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Evaluation of Ge_xSb_yTe_z Film Grown by Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vol. 725Evaluation of GexSbyTez Film Grown by Chemical...

Evaluation of Ge_xSb_yTe_z Film Grown by Chemical Vapor Deposition

Abstract:

This paper describes structure evaluation of GexSbyTez (GST) film fabricated by chemical vapor deposition (CVD). We successfully established composition controlled GST CVD with smooth surface by applying appropriate deposition conditions. By increasing Ge flow rate or reducing substrate temperature, the average grain size was reduced and the film flatness was improved. As the results, we succeeded to obtain the extremely smooth surface, and also to fill a finite hole with conformal film deposition. All GexSbyTez films showed FCC or amorphous crystalline structures, both are utilized in the proposed phase change random access memory (PRAM), in spite of the wide range of composition control. We believe these CVD-GST films are useful for PRAM applications.

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Materials Science Forum (Volume 725)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.289

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Online since:

July 2012

Authors:

Seiti Hamada, Takafumi Horiike, Tomohiro Uno, Masato Ishikawa, Hideaki Machida, Yoshio Ohshita, Atsushi Ogura

Keywords:

CVD, GeSbTe, PRAM, XAFS, X-Ray Diffraction (XRD)

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