XRD Investigation of the Crystalline Quality of Sn Doped β-Ga₂O₃ Films Deposited by the RF Magnetron Sputtering Method

Abstract:

For the purpose of increasing the conductivity of β-Ga₂O₃ films, Sn doping in the β-Ga₂O₃ films has been explored using co-sputtering. Growth of β-Ga₂O₃ was confirmed by the XRD pattern for the undoped sample. However, it is shown that the Ga₂O₃ phase is transformed from the β to the γ phase by Sn doping, because of the increase of the phase transition temperature from the γ to the β phase. To improve the crystalline quality, additional annealing at 900°C for 60 min is performed to the Sn doped film. The XRD peaks corresponding with β-Ga₂O₃ could be confirmed after the additional annealing.

• Periodical: Materials Science Forum (Volume 725)
• Pages: 269-272
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.725.269
• Online since: July 2012
• Authors: Jyun Kudou, Suguru Funasaki, Motoki Takahara, Isao Tsunoda, Kenichiro Takakura, Hidenori Ohyama, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Eddy Simoen, Cor Claeys
• Keywords: EDX, Gallium Oxide, Impurity Doping, SEM, Sputtering, Transparent Conducting Oxide, X-Ray Diffraction (XRD)

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