C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

Johji Nishio; Chiaki Kudou; Kentaro Tamura; Keiko Masumoto; Kazutoshi Kojima; Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.778-780.109

Paper Titles

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
p.91

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
p.95

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle
p.99

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.103

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
p.109

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor
p.113

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
p.117

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
p.121

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm...

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

Abstract:

C-face epitaxial growth of 4H-SiC was investigated considering the use as drift layers of high blocking voltage SiC power MOSFETs, such as 3.3 kV, using a multiple-wafer epitaxy system. As high as 50.9 μm/h was achieved as the growth rate while maintaining specular surface within quasi-150 mm-diameter wafers. Also, it has been found that the background carrier concentration could be lowered enough to control the desired n-type doping concentration of nitrogen. In addition, high-throughput has been confirmed by comparing the current data with the recent results reported.

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Materials Science Forum (Volumes 778-780)

Pages:

109-112

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.109

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Online since:

February 2014

Authors:

Johji Nishio, Chiaki Kudou, Kentaro Tamura, Keiko Masumoto, Kazutoshi Kojima, Toshiyuki Ohno

Keywords:

150-Mm Diameter, 4H-SiC Epitaxial Growth, Growth Rate, Throughput

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