Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Keiko Masumoto; Sachiko Ito; Hideto Goto; Hirotaka Yamaguchi; Kentaro Tamura; Chiaki Kudou; Johji Nishio; Kazutoshi Kojima; Toshiyuki Ohno; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.99

Paper Titles

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
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Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
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Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
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Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle
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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
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C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
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Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor
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Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
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Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Abstract:

We have investigated a conversion of basal plane dislocation (BPD) to threading edge dislocation (TED) in growth of epitaxial layers (epi-layers) on 4H-SiC vicinal substrates with an off-angle of 0.85° at low C/Si ratio of 0.7 by using deep KOH etching and X-ray topography observations. Deep KOH etching indicated that BPDs in the substrates converted to TEDs in the epi-layers. X-ray topography observations suggested that the conversion occurred during epitaxial growth when the thickness of epi-layers was less than 1.5 μm. We found that the conversion ratio obtained from counting deep KOH etch pits was over 99%.