Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Takanori Tanaka; Naoyuki Kawabata; Yoichiro Mitani; Nobuyuki Tomita; Masayoshi Tarutani; Takeharu Kuroiwa; Yoshihiko Toyoda; Masayuki Imaizumi; Hiroaki Sumitani; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.91

Paper Titles

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
p.75

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
p.79

Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
p.85

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
p.91

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
p.95

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle
p.99

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.103

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
p.109

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Demonstration of High Quality 4H-SiC Epitaxial...

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Abstract:

SiC epitaxial layer with low basal plane dislocation (BPD) density of 0.2/cm² was successfully grown under higher C/Si ratio, which is found on the investigation about growth conditions. In order to study conversion mechanism of BPDs to threading edge dislocations (TEDs), angles between directions of BPD lines on a substrate and that of moving edges of steps ([11-2) during growth were examined. Consequently, it was revealed that almost 98% of BPDs are converted to TEDs for the case of the absolute angles above 45°. This high conversion ratio is considered to be induced by enhanced lateral growth under the higher C/Si ratio condition.